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Terahertz photoconductivity and photocarrier dynamics in few-layer hBN/WS2 van der Waals heterostructure laminates
https://oist.repo.nii.ac.jp/records/1318
https://oist.repo.nii.ac.jp/records/1318aaee0bcd-cf52-4d82-b98f-2e6553f5c026
名前 / ファイル | ライセンス | アクション |
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WS2-hBN Laminates_Manuscript_Final_ACCEPTED VE (832.8 kB)
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International(https://creativecommons.org/licenses/by-nc-nd/4.0/)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-04-02 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Terahertz photoconductivity and photocarrier dynamics in few-layer hBN/WS2 van der Waals heterostructure laminates | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Bala Murali Krishna, M
× Bala Murali Krishna, M× Madéo, Julien× Urquizo, Joel Pérez× Zhu, Xing× Vinod, Soumya× Tiwary, Chandra Shekar× Ajayan, Pulickel M× Dani, Keshav M |
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書誌情報 |
en : Semiconductor Science and Technology 巻 33, 号 8, p. 084001, 発行日 2018-07-11 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Van der Waals (vdW) heterostructures is a rapidly emerging field that promises to produce ondemand properties for novel optoelectronic devices. Assembly of dissimilar two-dimensional atomic crystals in the vdW heterostructure enables unique features and properties which are fundamentally different from individual 2-dimensional (2D) crystals. Currently, most growth and fabrication methods prohibit large scale, micron-thick and robust heterostructures. An alternative approach is the one based on liquid phase exfoliation allowing the possibility of scalable thin films and composites. Such thin films have inherent and predicted advantages: they can display new behaviors due to their extremely high surface area and, as free-standing laminates, can be manipulated with mixing of nanosheets and other materials for novel device attributes. We use the aforementioned route to prepare spray-coated and few microns thick WS2 and hBN/WS2 heterostructure laminates. A combination of photoluminescence and transmission electron microscope measurements show that, despite the disordered layer stacking inherent to the fabrication process, the laminates preserve the few layer optical response. In particular, the hBN/WS2 heterostructure laminates exhibit a 3-layer average distribution. Using optical pumpterahertz probe (OPTP) measurement to access the photocarrier dynamics and photoconductivity, we study and compare the photocarrier dynamics and photoconductivity of pure WS2 and hBN/WS2 samples. The hBN/WS2 samples show an unusual response that is different from what has been previously reported for pure transition metal dichalcogenides. After photoexcitation, instead of a monotonic decay as in pure WS2, an initial fast decay is followed by a rise of the negative differential terahertz (THz) transmission dominating the dynamics for the following 50 ps. By analyzing the time resolved THz complex photoconductivity, we attribute this effect to the presence of free carriers as well as dipoles at the hBN/WS2 interfaces. As previously reported in hBN/Graphene heterostructures, interfacial dipoles can form along with free carriers at the instant of photoexcitation. Whereas free carriers cause a decrease in the transient THz transmission due to Coulomb screening, dipoles can provide an increase in the pump-induced change in transmission. In terms of complex photoconductivity, free carriers have both real and imaginary components while dipoles probed off-resonance provide almost a purely imaginary response. Our results provide a deeper understanding of the photoconductive response of large van der Waals heterostructure laminates fabricated by liquid phase exfoliation, and will enable their use in future optoelectronic applications. | |||||
出版者 | ||||||
出版者 | IOP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0268-1242 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1361-6641 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1088/1361-6641/aacc3b | |||||
権利 | ||||||
権利情報 | © 2018 IOP Publishing Ltd | |||||
権利 | ||||||
権利情報 | This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aacc3b. | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://iopscience.iop.org/article/10.1088/1361-6641/aacc3b | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |