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Excited states engineering enables efficient near-infrared lasing in nanographenes
https://oist.repo.nii.ac.jp/records/2321
https://oist.repo.nii.ac.jp/records/2321b76b046f-6cf5-46f0-858a-3deb7c42c8d8
名前 / ファイル | ライセンス | アクション |
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Paterno-Excited states engineering enables eff (3.8 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-10-14 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Excited states engineering enables efficient near-infrared lasing in nanographenes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者(英) |
Paternò, Giuseppe M.
× Paternò, Giuseppe M.× Chen, Qiang× Muñoz-Mármol, Rafael× Guizzardi, Michele× Bonal, Víctor× Kabe, Ryota× Barker, Alexander J.× Boj, Pedro G.× Chatterjee, Shreyam× Ie, Yutaka× Villalvilla, José M.× Quintana, José A.× Scotognella, Francesco× Müllen, Klaus× Díaz-García, María A.× Narita, Akimitsu× Lanzani, Guglielmo |
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書誌情報 |
en : Materials Horizons 発行日 2021-09-24 |
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抄録 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The spectral overlap between stimulated emission (SE) and absorption from dark states (i.e. charges and triplets) especially in the near-infrared (NIR), represents one of the most effective gain loss channels in organic semiconductors. Recently, bottom-up synthesis of atomically precise graphene nanostructures, or nanographenes (NGs), has opened a new route for the development of environmentally and chemically stable materials with optical gain properties. However, also in this case, the interplay between gain and absorption losses has hindered the attainment of efficient lasing action in the NIR. Here, we demonstrate that the introduction of two fluoranthene imide groups to the NG core leads to a more red-shifted emission than the precursor NG molecule (685 vs. 615 nm) and also with a larger Stokes shift (45 nm vs. 2 nm, 1026 cm⁻¹ vs. 53 cm⁻¹, respectively). Photophysical results indicate that, besides the minimisation of ground state absorption losses, such substitution permits to suppress the detrimental excited state absorption in the NIR, which likely arises from a dark state with charge-transfer character and triplets. This has enabled NIR lasing (720 nm) from all-solution processed distributed feedback devices with one order of magnitude lower thresholds than those of previously reported NIR-emitting NGs. This study represents an advance in the field of NGs and, in general, organic semiconductor photonics, towards the development of cheap and stable NIR lasers. | |||||
出版者 | ||||||
出版者 | Royal Society of Chemistry | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2051-6355 | |||||
PubMed番号 | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | PMID | |||||
関連識別子 | info:pmid/34605501 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1039/D1MH00846C | |||||
権利 | ||||||
権利情報 | © 2021 The Royal Society of Chemistry. | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://pubs.rsc.org/en/content/articlelanding/2021/MH/D1MH00846C | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |