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Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD
https://nitech.repo.nii.ac.jp/records/4127
https://nitech.repo.nii.ac.jp/records/4127ab6f148c-9402-4a5f-b902-665efcc4c55d
名前 / ファイル | ライセンス | アクション |
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本文_fulltext (896.1 kB)
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Copyright (c) 1992 IEICE http://search.ieice.org/index.html
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-11-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers Grown on Si by MOCVD | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Egawa, Takashi
× Egawa, Takashi× Jimbo, Takashi× Umeno, Masayoshi |
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著者別名 | ||||||
姓名 | 江川, 孝志 | |||||
著者別名 | ||||||
姓名 | 神保, 孝志 | |||||
著者別名 | ||||||
姓名 | 梅野, 正義 | |||||
書誌情報 |
IEICE transactions on communications 巻 E75-C, 号 1, p. 58-64, 発行日 1992-01-20 |
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出版者 | ||||||
出版者 | Institute of Electronics, Information and Communication Engineers | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09151893 | |||||
書誌レコードID(NCID) | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN10071283 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The heterointerfaces of Al0.3Ga0.7As/GaAs single quantum wells (SQWs) and the characteristics of SQW lasers grown on Si substrates with Al0.5Ga0.5As/Al0.55Ga0.45P intermediate layers (AlGaAs/AlGaP ILs) entirely by metalorganic chemical vapor deposition (MOCVD) are reported. The effects of thermal cycle annealing on the crystallinity and the lasing characteristics of GaAs/Si are also reported. By using the AlGaAs/AlGaP ILs, SQWs with a specular surface morphology and a smoother heterointerface can be grown on a Si substrate. Thermal cycle annealing is found to improve the crystallinity of GaAs/Si and to contribute to room-temperature continuous-wave operation of lasers on Si substrates. The combinations of the techniques of AlGaAs/AlGaP ILs and thermal cycle annealing improve the lasing characteristics: an average threshold current density of 1.83 kA/cm2, an average differential quantum efficiency of 52%, an internal quantum efficiency of 83%, an intrinsic mode loss coefficient of 23 cm-1, a differential gain coefficient of 1.9 cm/A, and a transparency current density of 266 A/cm2, which are superior to those of the two-step-grown laser on a Si substrate. The improvements of the lasing characteristics result from the smooth heterointerfaces of the AlGaAs/AlGaP ILs. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |